Multidisciplinary Journal of Science and Technology

Ge1-x Snx YARIMO‘TKAZGICHLI QATTIQ QORISHMA ZONA TUZILISHIN XUSUSIYATLARINI O‘RGANISH

Jumaniyozova Darmonjon Ro‘zmetovna

O‘zbekiston Respublikasi Oliy Ta’lim , Fan va Innovatsiyalar vazirligi Xorazm viloyati Abu Rayhon Beruniy nomidagi Urganch Davlat Universiteti Fizika-matematika fakulteti 70530901– Fizika (yo‘nalishlar bo‘yicha) 2-kurs magistranti

Asatova Umida Polvonovna

ILMIY RAHBAR

Keywords: Ge₁₋ₓSnₓ, yarimo‘tkazgich, zona tuzilishi, zichlik funksional nazariyasi (DFT), k·p modeli, Quantum ESPRESSO, taqiqlangan zona, panjara doimiysi, optoelektronika, infraqizil qurilmalar.

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Abstract

Ushbu maqolada Ge₁₋ₓSnₓ yarimo‘tkazgichli qattiq qorishmasining zona tuzilishi xususiyatlari zichlik funksional nazariyasi (DFT) va k·p modeli yordamida o‘rganildi. Ge va Sn atomlari nisbati o‘zgarishi bilan qorishmaning elektron tuzilishi, energiya zonalari, taqiqlangan zona kengligi va panjara doimiysi tahlil qilindi. Hisoblashlar Quantum ESPRESSO dasturida amalga oshirilib, Ge₀.₉₇Sn₀.₀₃ qotishmasi uchun taqiqlangan zona kengligi 0,58 eV ga kamaygani aniqlandi. Sn konsentrasiyasining oshishi bilan taqiqlangan zona torayishi va panjara doimiysining ortishi kuzatildi. Natijalar Ge₁₋ₓSnₓ qorishmalarining infraqizil diapazonli optoelektronika va fotonika qurilmalarida qo‘llanilishi uchun istiqbolli ekanligini ko‘rsatdi. Tadqiqot optoelektron qurilmalar va lazerlar ishlab chiqarishda ilmiy va amaliy ahamiyatga ega.

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